Realistic and efficient simulation of electro-thermal effects in VLSI circuits

被引：26

作者：

Sabry, MN ^{[1
]}

Bontemps, A ^{[1
]}

Aubert, V ^{[1
]}

Vahrmann, R ^{[1
]}

机构：

[1] TEMIC,HEILBRONN,GERMANY

来源：

IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS | 1997年 / 5卷 / 03期

关键词：

electro-thermal; extraction; simulation; thermal network;

D O I：

10.1109/92.609871

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 [计算机科学与技术];

摘要：

Needs for electro-thermal simulation of VLSI circuits, as opposed to both the system and device levels, are analyzed. A system capable of modeling these effects in a realistic and sufficiently accurate way that uses a reasonable amount of CPU resources is presented, An innovative solver is also proposed. The system is used to study the importance of some three-dimensional (3-D) effects as well as metallic connections. A complete example mas treated to have an insight on the type of results to be expected and the corresponding costs in terms of CPU.

引用

页码：283 / 289

页数：7

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