WO3 thin films prepared by pulsed laser deposition

被引:19
作者
Mitsugi, F [1 ]
Hiraiwa, E
Ikegami, T
Ebihara, K
Thareja, RK
机构
[1] Kumamoto Univ, Dept Elect & Comp Engn, Grad Sch Sci & Technol, Kumamoto 8608555, Japan
[2] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 08期
关键词
WO3; gas sensor; pulsed laser deposition; tetragonal; triclinic;
D O I
10.1143/JJAP.41.5372
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the structural and gas sensing properties of tungsten trioxide (WO3) thin films prepared by the KrF excimer pulsed laser deposition technique. The WO3 thin films having amorphous, crystallized tetragonal and triclinic structures were fabricated at the oxygen pressure of 10-300 mTorr and the substrate temperature of 150-800degreesC. We revealed the effect of the oxygen pressure and substrate temperature during the deposition on the crystal phases of the WO3 thin films. The atomic force microscopy measurement shows that the average grain size and the average number of grains are approximately 200 nm and 8/mum(2), respectively. The triclinic WO3 thin film with a thickness of 1 mum showed high sensitivity of 254 in NO (60 ppm) gas at a low operating temperature of 150degreesC.
引用
收藏
页码:5372 / 5375
页数:4
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