Fabrication and vacuum annealing of transparent conductive AZO thin films prepared by DC magnetron sputtering

被引：141

作者：

Fang, GJ ^{[1
]}

Li, DJ

Yao, BL

机构：

[1] Tsing Hua Univ, Dept Elect Engn, Natl Lab Integrated Optoelect, Beijing 100084, Peoples R China

[2] Xiangfan Univ, Dept Phys, Xiangfan 441053, Hubei, Peoples R China

来源：

VACUUM | 2002年 / 68卷 / 04期

基金：

中国博士后科学基金;

关键词：

AZO thin films; C-axis orientation; DC magnetron sputtering; vacuum annealing; structural characterization; electrical properties;

D O I：

10.1016/S0042-207X(02)00544-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using highly conductive M-doped ZnO (AZO) ceramic target, (0 0 2)-oriented transparent conductive AZO thin films are prepared by DC planar magnetron sputtering deposition on glass sheet substrate. Structural, electrical and optical properties of the films deposited at different temperatures and subsequently annealed at 400degreesC for 2 h under 10(-3) Pa are characterized with various techniques. Experimental results show that the electrical resistivity of AZO thin films deposited at 320degreesC can be as low as 1.5 x 10(-4) Omegacm with post-deposition annealing. The annealing process leads to improvement of (0 0 2) orientation, wider band gap, increased carrier concentration and blue shift of absorption edge in the transmission spectra of AZO thin films. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：363 / 372

页数：10

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