Blue shift in room temperature photoluminescence from photo-chemical vapor deposited ZnO films

被引:114
作者
Lee, GH
Yamamoto, Y
Kourogi, M
Ohtsu, M
机构
[1] Japan Sci & Technol Corp, Machida, Tokyo 1940004, Japan
[2] Tokyo Inst Technol, Interdisciplinary Grad Sch & Engn, Midori Ku, Yokohama, Kanagawa 2268508, Japan
关键词
zinc oxide; chemical vapor deposition; luminescence; optical properties;
D O I
10.1016/S0040-6090(01)00764-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Highly transparent ZnO films were deposited on (001) alpha -Al2O3 at substrate temperature in the range of room temperature to 300 degreesC by photo-chemical vapor deposition, This enabled selective deposition of ZnO films on the selected substrate area irradiated by the light source. With the descending substrate temperature as low as 100 degreesC, band gap widening of the films has been observed, which resulted in the shift of room temperature ultraviolet photoluminescence of ZnO from 380 nm to the shorter wavelength of 360 nm. It implies that in situ patterning of ZnO with different wavelength emission characteristics is possible on the same substrate by controlling the deposition temperature. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:117 / 120
页数:4
相关论文
共 22 条
[1]   CHARACTERISTICS OF LASER METALORGANIC VAPOR-PHASE EPITAXY IN GAAS [J].
AOYAGI, Y ;
KANAZAWA, M ;
DOI, A ;
IWAI, S ;
NAMBA, S .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) :3131-3135
[2]   Room temperature excitonic stimulated emission from zinc oxide epilayers grown by plasma-assisted MBE [J].
Bagnall, DM ;
Chen, YF ;
Shen, MY ;
Zhu, Z ;
Goto, T ;
Yao, T .
JOURNAL OF CRYSTAL GROWTH, 1998, 184 :605-609
[3]   High temperature excitonic stimulated emission from ZnO epitaxial layers [J].
Bagnall, DM ;
Chen, YF ;
Zhu, Z ;
Yao, T ;
Shen, MY ;
Goto, T .
APPLIED PHYSICS LETTERS, 1998, 73 (08) :1038-1040
[4]   LASER SELECTIVE DEPOSITION OF III-V-COMPOUNDS ON GAAS AND SI SUBSTRATES [J].
BEDAIR, SM ;
WHISNANT, JK ;
KARAM, NH ;
GRIFFIS, D ;
ELMASRY, NA ;
STADELMAIER, HH .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :229-234
[5]   Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization [J].
Chen, YF ;
Bagnall, DM ;
Koh, HJ ;
Park, KT ;
Hiraga, K ;
Zhu, ZQ ;
Yao, T .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3912-3918
[6]   Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn [J].
Cho, SL ;
Ma, J ;
Kim, YK ;
Sun, Y ;
Wong, GKL ;
Ketterson, JB .
APPLIED PHYSICS LETTERS, 1999, 75 (18) :2761-2763
[7]   CHARACTERISTICS OF HIGH-QUALITY ZNO THIN-FILMS DEPOSITED BY PULSED-LASER DEPOSITION [J].
CRACIUN, V ;
ELDERS, J ;
GARDENIERS, JGE ;
BOYD, IW .
APPLIED PHYSICS LETTERS, 1994, 65 (23) :2963-2965
[8]   Si incorporation and Burstein-Moss shift in n-type GaAs [J].
Hudait, MK ;
Modak, P ;
Krupanidhi, SB .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 60 (01) :1-11
[9]   Fabrication of ZnO nanostructure using near-field optical technology [J].
Lee, GH ;
Yamamoto, Y ;
Kourogi, M ;
Ohtsu, M .
NEAR-FIELD OPTICS: PHYSICS, DEVICES, AND INFORMATION PROCESSING, 1999, 3791 :132-139
[10]   DETERMINATION OF CONDUCTION-BAND TAIL AND FERMI ENERGY OF HEAVILY SI-DOPED GAAS BY ROOM-TEMPERATURE PHOTOLUMINESCENCE [J].
LEE, NY ;
LEE, KJ ;
LEE, C ;
KIM, JE ;
PARK, HY ;
KWAK, DH ;
LEE, HC ;
LIM, H .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (05) :3367-3370