Fabrication of ZnO nanostructure using near-field optical technology

被引:14
作者
Lee, GH [1 ]
Yamamoto, Y [1 ]
Kourogi, M [1 ]
Ohtsu, M [1 ]
机构
[1] Japan Sci & Technol Corp, Machida, Tokyo 1940004, Japan
来源
NEAR-FIELD OPTICS: PHYSICS, DEVICES, AND INFORMATION PROCESSING | 1999年 / 3791卷
关键词
ZnO nanodot; photo-enhanced chemical vapor deposition (PE-MOCVD); optical near-field;
D O I
10.1117/12.363850
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
ZnO nanodots have been successfully fabricated on a (001) Al2O3 substrate by photo-enhanced chemical vapor deposition (PE-MOCVD) combined with near-field optical technology. The optical near-field generated from an optical fiber probe tip allowed ZnO dots to selectively grow on the irradiated substrate surface, with a size smaller than the wavelength of the light source (lambda=244nm). The crystallinity and composition of ZnO were evaluated from planar films using x-ray diffraction analysis, optical transmittance and x-ray photoelectron spectroscopy (XPS). The planar films were grown using PE-MOCVD with a direct irradiation by an ultraviolet light source without probe tip. Above a deposition temperature of 150 degrees C, stoichiometric ZnO films (R O:zn=1), strongly the c-axis oriented and exhibiting a band gap of about 3.3 eV were obtained.
引用
收藏
页码:132 / 139
页数:8
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