SELECTIVE GROWTH OF GAAS INGAP HETEROSTRUCTURES BY PHOTO-ENHANCED ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION

被引：8

作者：

MAAYAN, E ^{[1
]}

KREININ, O ^{[1
]}

BAHIR, G ^{[1
]}

SALZMAN, J ^{[1
]}

EYAL, A ^{[1
]}

BESERMAN, R ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST LIB & INFORMAT SCI,IL-32000 HAIFA,ISRAEL

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 135卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(94)90721-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Selective epitaxial growth of GaAs on GaAs and In0.49Ga0.51P surfaces, using photo-enhanced organometallic chemical vapor deposition, was investigated. The growth rate dependence on illumination intensity, trimethylgallium partial pressure, and temperature is reported. In-situ patterning and three-dimensional shaping during growth of GaAs/InGaP buried heterostructures, are demonstrated. The experimental results are in good agreement with a simple model, in which the decomposition of adsorbed trimethylgallium is assisted by surface recombination of photo-excited free carriers.

引用

页码：23 / 30

页数：8

共 19 条

[1] LASER ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION CRYSTAL-GROWTH IN GAAS [J].

AOYAGI, Y ;

MASUDA, S ;

NAMBA, S ;

DOI, A .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :95-96

[2] KINETIC LIMITS OF MONOLAYER GROWTH ON (001) GAAS BY ORGANOMETALLIC CHEMICAL-VAPOR DEPOSITION [J].

ASPNES, DE ;

COLAS, E ;

STUDNA, AA ;

BHAT, R ;

KOZA, MA ;

KERAMIDAS, VG .

PHYSICAL REVIEW LETTERS, 1988, 61 (24) :2782-2785

[3]

DAPKUS PD, 1991, J CRYST GROWTH, V107, P73, DOI 10.1016/0022-0248(91)90437-A

[4] NONPLANAR MOVPE GROWTH USING A NOVEL SHADOW-MASKING TECHNIQUE [J].

DEMEESTER, P ;

BUYDENS, L ;

MOERMAN, I ;

LOOTENS, D ;

VANDAELE, P .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :161-165

[5]

DOI A, 1988, JPN J APPL PHYS 1, V27, P795, DOI 10.1143/JJAP.27.795

[6]

DOI A, 1986, APPL PHYS LETT, V48, P1787, DOI 10.1063/1.96787

[7] INVESTIGATIONS OF PHOTO-ASSOCIATION MECHANISM FOR GROWTH-RATE ENHANCEMENT IN PHOTO-ASSISTED OMVPE OF ZNSE AND ZNS [J].

FUJITA, S ;

TANABE, A ;

SAKAMOTO, T ;

ISEMURA, M ;

FUJITA, S .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :259-264

[8] BURIED GAINAS/INP LAYERS GROWN ON NONPLANAR SUBSTRATES BY ONE-STEP LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY [J].

GALEUCHET, YD ;

ROENTGEN, P ;

GRAF, V .

APPLIED PHYSICS LETTERS, 1988, 53 (26) :2638-2640

[9]

HEINECKE H, 1984, J ELECTRON MATER, V13, P815, DOI 10.1007/BF02657928

[10] PATTERNED CRYSTAL-GROWTH OF GAAS USING LASER SCANNING WITH ATOMIC LAYER EPITAXY [J].

IWAI, S ;

MEGURO, T ;

AOYAGI, Y ;

MIYOSHI, T .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :136-140

← 1 2 →