NONPLANAR MOVPE GROWTH USING A NOVEL SHADOW-MASKING TECHNIQUE

The growth of GaAs/AlGaAs multilayer structures on shadow-masked substrates by metalorganic vapour phase epitaxy is reported. A novel shadow-masking technique is introduced which makes use of epitaxial layers for spacer and mask and which is defined by lithography and reactive ion etching. Growth velocity variations up to a factor of 5 have been observed when varying the window width in the shadow mask. This technique finds interesting applications for locally changing the bandgap of quantum well material. Single quantum well light emitting diodes showed a variation in emission wavelength between 815 and 850 nm.