SCALING OF GAAS/ALGAAS LASER-DIODES FOR SUBMILLIAMPERE THRESHOLD CURRENT

被引：24

作者：

MARCLAY, E

ARENT, DJ

HARDER, C

MEIER, HP

WALTER, W

WEBB, DJ

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 14期

关键词：

D O I：

10.1049/el:19890598

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：892 / 894

页数：3

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[1] CRYSTAL ORIENTATION DEPENDENCE OF SILICON AUTOCOMPENSATION IN MOLECULAR-BEAM EPITAXIAL GALLIUM-ARSENIDE
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[2] VERY LOW THRESHOLD CURRENT DENSITIES (UNDER 100 A/CM2) IN ALGAAS/GAAS SINGLE-QUANTUM-WELL GRINSCH LASERS GROWN BY MOLECULAR-BEAM EPITAXY
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[3] ULTRALOW-THRESHOLD GRADED-INDEX SEPARATE-CONFINEMENT SINGLE QUANTUM-WELL BURIED HETEROSTRUCTURE (AL,GA)AS LASERS WITH HIGH REFLECTIVITY COATINGS
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[5] JAECKEL H, UNPUB APPL PHYS LETT
[6] LOW-THRESHOLD PATTERNED QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. ELECTRONICS LETTERS, 1988, 24 (16) : 985 - 986
[7] ULTIMATE LIMIT IN LOW THRESHOLD QUANTUM WELL GAALAS SEMICONDUCTOR-LASERS
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[8] PROBLEMS RELATED TO THE FORMATION OF LATERAL P-N-JUNCTIONS ON CHANNELED SUBSTRATE (100) GAAS FOR LASERS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 692 - 695
[9] EXTREMELY LOW THRESHOLD (ALGA)AS GRADED-INDEX WAVEGUIDE SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 217 - 219
[10] VERY LOW THRESHOLD CURRENT RIDGE-WAVEGUIDE ALGAAS GAAS SINGLE-QUANTUM-WELL LASERS
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[J]. ELECTRONICS LETTERS, 1985, 21 (22) : 1025 - 1026