VERY LOW THRESHOLD CURRENT RIDGE-WAVEGUIDE ALGAAS GAAS SINGLE-QUANTUM-WELL LASERS

被引：36

作者：

WADA, O

SANADA, T

KUNO, M

FUJII, T

机构：

[1] Fujitsu Ltd, Atsugi, Jpn, Fujitsu Ltd, Atsugi, Jpn

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 22期

关键词：

D O I：

10.1049/el:19850727

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1025 / 1026

页数：2

共 9 条

[1] MBE GROWTH OF EXTREMELY HIGH-QUALITY GAAS-ALGAAS GRIN-SCH LASERS WITH A SUPERLATTICE BUFFER LAYER
FUJII, T
HIYAMIZU, S
YAMAKOSHI, S
ISHIKAWA, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 776 - 778
[2] VERY LOW THRESHOLD CURRENT GAAS-ALGAAS GRIN-SCH LASERS GROWN BY MBE FOR OEIC APPLICATIONS
FUJII, T
YAMAKOSHI, S
NANBU, K
WADA, O
HIYAMIZU, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 259 - 261
[3] FUJII T, 1984, SUPPL JPN J APPL PHY, P145
[4] SOME CHARACTERISTICS OF THE GAAS GAALAS GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE QUANTUM WELL LASER STRUCTURE
HERSEE, SD
DECREMOUX, B
DUCHEMIN, JP
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 476 - 478
[5] VERY LOW THRESHOLD GRIN-SCH GAAS/GAALAS LASER STRUCTURE GROWN BY OM-VPE
HERSEE, SD
BALDY, M
ASSENAT, P
DECREMOUX, B
DUCHEMIN, JP
[J]. ELECTRONICS LETTERS, 1982, 18 (20) : 870 - 871
[6] VERY NARROW GRADED-BARRIER SINGLE QUANTUM WELL LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
KASEMSET, D
HONG, CS
PATEL, NB
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 912 - 914
[7] ULTRALOW THRESHOLD, GRADED-INDEX WAVEGUIDE, SEPARATE CONFINEMENT, CW BURIED-HETEROSTRUCTURE LASERS
TSANG, WT
LOGAN, RA
DITZENBERGER, JA
[J]. ELECTRONICS LETTERS, 1982, 18 (19) : 845 - 847
[8] EXTREMELY LOW THRESHOLD (ALGA)AS GRADED-INDEX WAVEGUIDE SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 217 - 219
[9] YAMAKOSHI S, 1984, 9TH IEEE INT SEM LAS, P24

← 1 →