LOW-THRESHOLD QUANTUM WELL LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON NONPLANAR SUBSTRATES

被引：33

作者：

DZURKO, KM ^{[1
]}

MENU, EP ^{[1
]}

BEYLER, CA ^{[1
]}

OSINSKI, JS ^{[1
]}

DAPKUS, PD ^{[1
]}

机构：

[1] UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 06期

关键词：

D O I：

10.1109/3.29280

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1450 / 1458

页数：9

共 23 条

[1] GROWTH-BEHAVIOR DURING NONPLANAR METALORGANIC VAPOR-PHASE EPITAXY
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[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) : 2284 - 2290
[2] LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALXGA1-XAS-GAAS QUANTUM WELL LASERS
DEPPE, DG
HSIEH, KC
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) : 4515 - 4520
[3] ULTRALOW-THRESHOLD GRADED-INDEX SEPARATE-CONFINEMENT SINGLE QUANTUM-WELL BURIED HETEROSTRUCTURE (AL,GA)AS LASERS WITH HIGH REFLECTIVITY COATINGS
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LAU, KY
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LEE, K
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1773 - 1775
[4] SINGLE-LONGITUDINAL-MODE CW ROOM-TEMPERATURE GA1-XALXAS-GAAS CHANNEL-GUIDE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
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DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 724 - 726
[5] DUPUIS RD, 1978, I PHYS C SER, V45, P1
[6] TEMPERATURE ENGINEERED GROWTH OF LOW-THRESHOLD QUANTUM WELL LASERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DZURKO, KM
MENU, EP
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OSINSKI, JS
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (02) : 105 - 107
[7] DZURKO KM, 1988, 11TH P IEEE SEM LAS
[8] DZURKO KM, 1988, 15TH P INT S GAAS RE
[9] VERY LOW THRESHOLD BURIED HETEROSTRUCTURE QUANTUM WELL LASERS BY LASER-ASSISTED DISORDERING
EPLER, JE
THORNTON, RL
PAOLI, TL
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (17) : 1371 - 1373
[10] A STUDY OF THE ORIENTATION DEPENDENCE OF GA(AL)AS GROWTH BY MOVPE
HERSEE, SD
BARBIER, E
BLONDEAU, R
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 310 - 320

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