VERY LOW THRESHOLD BURIED HETEROSTRUCTURE QUANTUM WELL LASERS BY LASER-ASSISTED DISORDERING

[1] LOW THRESHOLD, HIGH-EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 228 - 230

[2] DULEY WW, 1983, LASER PROCESSING ANA, pCH3

[3] DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1

[4] LASER-INDUCED DISORDERING OF GAAS-ALGAAS SUPERLATTICE AND INCORPORATION OF SI IMPURITY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (21) : 1447 - 1449

[5] LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALGAAS DIODE-LASERS BY ANISOTROPIC DIFFUSION OF LASER-INCORPORATED SI [J]. APPLIED PHYSICS LETTERS, 1987, 51 (10) : 731 - 733

[6] LOW THRESHOLD BURIED HETEROSTRUCTURE QUANTUM-WELL DIODE-LASERS BY LASER-ASSISTED DISORDERING [J]. APPLIED PHYSICS LETTERS, 1987, 50 (23) : 1637 - 1639

[7] HOLONYAK N, 1983, Patent No. 4378155

[8] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[1] LOW THRESHOLD, HIGH-EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 228 - 230

[2] DULEY WW, 1983, LASER PROCESSING ANA, pCH3

[3] DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1

[4] LASER-INDUCED DISORDERING OF GAAS-ALGAAS SUPERLATTICE AND INCORPORATION OF SI IMPURITY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (21) : 1447 - 1449

[5] LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALGAAS DIODE-LASERS BY ANISOTROPIC DIFFUSION OF LASER-INCORPORATED SI [J]. APPLIED PHYSICS LETTERS, 1987, 51 (10) : 731 - 733

[6] LOW THRESHOLD BURIED HETEROSTRUCTURE QUANTUM-WELL DIODE-LASERS BY LASER-ASSISTED DISORDERING [J]. APPLIED PHYSICS LETTERS, 1987, 50 (23) : 1637 - 1639

[7] HOLONYAK N, 1983, Patent No. 4378155

[8] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159