LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALGAAS DIODE-LASERS BY ANISOTROPIC DIFFUSION OF LASER-INCORPORATED SI

被引：11

作者：

EPLER, JE

BURNHAM, RD

THORNTON, RL

PAOLI, TL

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 10期

关键词：

D O I：

10.1063/1.98849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：731 / 733

页数：3

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共 9 条

[1] LOW THRESHOLD, HIGH-EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BURNHAM, RD
SCIFRES, DR
STREIFER, W
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 228 - 230
[2] LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALXGA1-XAS-GAAS QUANTUM WELL LASERS
DEPPE, DG
HSIEH, KC
HOLONYAK, N
BURNHAM, RD
THORNTON, RL
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) : 4515 - 4520
[3] DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1
[4] LASER-INDUCED DISORDERING OF GAAS-ALGAAS SUPERLATTICE AND INCORPORATION OF SI IMPURITY
EPLER, JE
BURNHAM, RD
THORNTON, RL
PAOLI, TL
BASHAW, MC
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (21) : 1447 - 1449
[5] LOW THRESHOLD BURIED HETEROSTRUCTURE QUANTUM-WELL DIODE-LASERS BY LASER-ASSISTED DISORDERING
EPLER, JE
BURNHAM, RD
THORNTON, RL
PAOLI, TL
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (23) : 1637 - 1639
[6] HOLONYAK N, 1983, Patent No. 4378155
[7] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159
[8] UNIVERSAL STAIN-ETCHANT FOR INTERFACES IN III-V COMPOUNDS
OLSEN, GH
ETTENBERG, M
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) : 5112 - 5114
[9] SILICON DIFFUSION INTO ALXGA1-XAS(X=0-0.4) FROM A SPUTTERED SILICON FILM
OMURA, E
WU, XS
VAWTER, GA
HU, EL
COLDREN, LA
MERZ, JL
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (05) : 265 - 266