TEMPERATURE ENGINEERED GROWTH OF LOW-THRESHOLD QUANTUM WELL LASERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：28

作者：

DZURKO, KM ^{[1
]}

MENU, EP ^{[1
]}

BEYLER, CA ^{[1
]}

OSINSKI, JS ^{[1
]}

DAPKUS, PD ^{[1
]}

机构：

[1] UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 02期

关键词：

D O I：

10.1063/1.101242

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：105 / 107

页数：3

共 13 条

[1] GROWTH-BEHAVIOR DURING NONPLANAR METALORGANIC VAPOR-PHASE EPITAXY
DEMEESTER, P
VANDAELE, P
BAETS, R
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) : 2284 - 2290
[2] DENBAARS SP, 1987, ELECTRONIC MATERIALS
[3] LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALXGA1-XAS-GAAS QUANTUM WELL LASERS
DEPPE, DG
HSIEH, KC
HOLONYAK, N
BURNHAM, RD
THORNTON, RL
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) : 4515 - 4520
[4] DUPUIS RD, 1978, APPL PHYS LETT, V33, P725
[5] DZURKO KM, 1988, 15TH P INT S GAAS RE
[6] VERY LOW THRESHOLD BURIED HETEROSTRUCTURE QUANTUM WELL LASERS BY LASER-ASSISTED DISORDERING
EPLER, JE
THORNTON, RL
PAOLI, TL
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (17) : 1371 - 1373
[7] A STUDY OF THE ORIENTATION DEPENDENCE OF GA(AL)AS GROWTH BY MOVPE
HERSEE, SD
BARBIER, E
BLONDEAU, R
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 310 - 320
[8] MOLECULAR-BEAM EPITAXY OF GAAS/ALGAAS SUPERLATTICE HETEROSTRUCTURES ON NONPLANAR SUBSTRATES
KAPON, E
TAMARGO, MC
HWANG, DM
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (06) : 347 - 349
[9] NONLINEAR ABSORPTION IN ALGAAS/GAAS MULTIPLE QUANTUM-WELL STRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
LEE, HC
HARIZ, A
DAPKUS, PD
KOST, A
KAWASE, M
GARMIRE, E
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1182 - 1184
[10] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH FOR BURIED HETEROSTRUCTURE GAALAS LASERS WITH SEMIINSULATING BLOCKING LAYERS
OKAYASU, M
KOZEN, A
HASUMI, Y
TEMMYO, J
UEHARA, S
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (24) : 1980 - 1982

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