THICKNESS VARIATIONS DURING MOVPE GROWTH ON PATTERNED SUBSTRATES

被引：30

作者：

BUYDENS, L

DEMEESTER, P

VANACKERE, M

ACKAERT, A

VANDAELE, P

机构：

[1] Laboratory of Electromagnetism and Acoustics, University of Gent-IMEC, Gent, B-9000

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 04期

关键词：

AlGaAs; MOVPE; non planar growth; thickness variations;

D O I：

10.1007/BF02651291

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experiments have been carried out to investigate thickness variations between epitaxial layers grown on ridges or channels and the surrounding planar surface. Results show a remarkable variation in growth velocity, even for relatively wide channels and ridges. Using these findings, a novel laser/waveguide coupling technique, which uses a single epitaxial growth step, is proposed. © 1990 The Mineral,Metal & Materials Society,Inc.

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页码：317 / 321

页数：5

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