CHARACTERISTICS OF LASER METALORGANIC VAPOR-PHASE EPITAXY IN GAAS

[1] REACTION OF C2H4 WITH PHOTO-FORMED O- HOLE-CENTERS ON SUPPORTED MOO3 [J]. JOURNAL OF CATALYSIS, 1982, 75 (01) : 204 - 206

[2] LASER ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION CRYSTAL-GROWTH IN GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 95 - 96

[3] BENEKING H, 1984, LASER PROCESSING DIA, P188

[4] Carslow HS, 1959, CONDUCTION HEAT SOLI

[5] EHRLICH DJ, 1983, J VAC SCI TECHNOL B, V1, P969, DOI 10.1116/1.582718

[6] A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 145 - 153

[7] THERMAL CONDUCTIVITY OF SILICON GERMANIUM 3-5 COMPOUNDS AND 3-5 ALLOYS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 161 - &

[8] NISHIZAWA J, 1984, 16 C SOL STAT DEV MA, P1

[1] REACTION OF C2H4 WITH PHOTO-FORMED O- HOLE-CENTERS ON SUPPORTED MOO3 [J]. JOURNAL OF CATALYSIS, 1982, 75 (01) : 204 - 206

[2] LASER ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION CRYSTAL-GROWTH IN GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 95 - 96

[3] BENEKING H, 1984, LASER PROCESSING DIA, P188

[4] Carslow HS, 1959, CONDUCTION HEAT SOLI

[5] EHRLICH DJ, 1983, J VAC SCI TECHNOL B, V1, P969, DOI 10.1116/1.582718

[6] A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 145 - 153

[7] THERMAL CONDUCTIVITY OF SILICON GERMANIUM 3-5 COMPOUNDS AND 3-5 ALLOYS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 161 - &

[8] NISHIZAWA J, 1984, 16 C SOL STAT DEV MA, P1