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CHARACTERISTICS OF LASER METALORGANIC VAPOR-PHASE EPITAXY IN GAAS
被引:40
作者
:
AOYAGI, Y
论文数:
0
引用数:
0
h-index:
0
AOYAGI, Y
KANAZAWA, M
论文数:
0
引用数:
0
h-index:
0
KANAZAWA, M
DOI, A
论文数:
0
引用数:
0
h-index:
0
DOI, A
IWAI, S
论文数:
0
引用数:
0
h-index:
0
IWAI, S
NAMBA, S
论文数:
0
引用数:
0
h-index:
0
NAMBA, S
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1986年
/ 60卷
/ 09期
关键词
:
D O I
:
10.1063/1.337725
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:3131 / 3135
页数:5
相关论文
共 8 条
[1]
REACTION OF C2H4 WITH PHOTO-FORMED O- HOLE-CENTERS ON SUPPORTED MOO3
ANPO, M
论文数:
0
引用数:
0
h-index:
0
ANPO, M
KUBOKAWA, Y
论文数:
0
引用数:
0
h-index:
0
KUBOKAWA, Y
[J].
JOURNAL OF CATALYSIS,
1982,
75
(01)
: 204
-
206
[2]
LASER ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION CRYSTAL-GROWTH IN GAAS
AOYAGI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
INT MICRO TECHNOL CORP,CHIYODA KU,TOKYO 101,JAPAN
INT MICRO TECHNOL CORP,CHIYODA KU,TOKYO 101,JAPAN
AOYAGI, Y
MASUDA, S
论文数:
0
引用数:
0
h-index:
0
机构:
INT MICRO TECHNOL CORP,CHIYODA KU,TOKYO 101,JAPAN
INT MICRO TECHNOL CORP,CHIYODA KU,TOKYO 101,JAPAN
MASUDA, S
NAMBA, S
论文数:
0
引用数:
0
h-index:
0
机构:
INT MICRO TECHNOL CORP,CHIYODA KU,TOKYO 101,JAPAN
INT MICRO TECHNOL CORP,CHIYODA KU,TOKYO 101,JAPAN
NAMBA, S
DOI, A
论文数:
0
引用数:
0
h-index:
0
机构:
INT MICRO TECHNOL CORP,CHIYODA KU,TOKYO 101,JAPAN
INT MICRO TECHNOL CORP,CHIYODA KU,TOKYO 101,JAPAN
DOI, A
[J].
APPLIED PHYSICS LETTERS,
1985,
47
(02)
: 95
-
96
[3]
BENEKING H, 1984, LASER PROCESSING DIA, P188
[4]
Carslow HS, 1959, CONDUCTION HEAT SOLI
[5]
EHRLICH DJ, 1983, J VAC SCI TECHNOL B, V1, P969, DOI 10.1116/1.582718
[6]
A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY
LEYS, MR
论文数:
0
引用数:
0
h-index:
0
LEYS, MR
VEENVLIET, H
论文数:
0
引用数:
0
h-index:
0
VEENVLIET, H
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 145
-
153
[7]
THERMAL CONDUCTIVITY OF SILICON GERMANIUM 3-5 COMPOUNDS AND 3-5 ALLOYS
MAYCOCK, PD
论文数:
0
引用数:
0
h-index:
0
MAYCOCK, PD
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(03)
: 161
-
&
[8]
NISHIZAWA J, 1984, 16 C SOL STAT DEV MA, P1
←
1
→
共 8 条
[1]
REACTION OF C2H4 WITH PHOTO-FORMED O- HOLE-CENTERS ON SUPPORTED MOO3
ANPO, M
论文数:
0
引用数:
0
h-index:
0
ANPO, M
KUBOKAWA, Y
论文数:
0
引用数:
0
h-index:
0
KUBOKAWA, Y
[J].
JOURNAL OF CATALYSIS,
1982,
75
(01)
: 204
-
206
[2]
LASER ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION CRYSTAL-GROWTH IN GAAS
AOYAGI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
INT MICRO TECHNOL CORP,CHIYODA KU,TOKYO 101,JAPAN
INT MICRO TECHNOL CORP,CHIYODA KU,TOKYO 101,JAPAN
AOYAGI, Y
MASUDA, S
论文数:
0
引用数:
0
h-index:
0
机构:
INT MICRO TECHNOL CORP,CHIYODA KU,TOKYO 101,JAPAN
INT MICRO TECHNOL CORP,CHIYODA KU,TOKYO 101,JAPAN
MASUDA, S
NAMBA, S
论文数:
0
引用数:
0
h-index:
0
机构:
INT MICRO TECHNOL CORP,CHIYODA KU,TOKYO 101,JAPAN
INT MICRO TECHNOL CORP,CHIYODA KU,TOKYO 101,JAPAN
NAMBA, S
DOI, A
论文数:
0
引用数:
0
h-index:
0
机构:
INT MICRO TECHNOL CORP,CHIYODA KU,TOKYO 101,JAPAN
INT MICRO TECHNOL CORP,CHIYODA KU,TOKYO 101,JAPAN
DOI, A
[J].
APPLIED PHYSICS LETTERS,
1985,
47
(02)
: 95
-
96
[3]
BENEKING H, 1984, LASER PROCESSING DIA, P188
[4]
Carslow HS, 1959, CONDUCTION HEAT SOLI
[5]
EHRLICH DJ, 1983, J VAC SCI TECHNOL B, V1, P969, DOI 10.1116/1.582718
[6]
A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY
LEYS, MR
论文数:
0
引用数:
0
h-index:
0
LEYS, MR
VEENVLIET, H
论文数:
0
引用数:
0
h-index:
0
VEENVLIET, H
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 145
-
153
[7]
THERMAL CONDUCTIVITY OF SILICON GERMANIUM 3-5 COMPOUNDS AND 3-5 ALLOYS
MAYCOCK, PD
论文数:
0
引用数:
0
h-index:
0
MAYCOCK, PD
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(03)
: 161
-
&
[8]
NISHIZAWA J, 1984, 16 C SOL STAT DEV MA, P1
←
1
→