Thin multilayer CdS/ZnS films grown by SILAR technique

Multilayer ZnS/CdS thin films were grown an glass, ITO-covered glass and (100)GaAs substrates by successive ionic layer adsorption and reaction (SILAR) technique at room temperature anti ambient pressure. The layers in multilayer thin film structures were nominally 1-6 nm thick and the amount of layers varied so that the total thickness of 100-120 nm was achieved. The films were polycrystalline according to X-ray diffraction analysis and scanning electron microscopy, The interfaces between the separate cadmium sulfide (CdS) and zinc sulfide (ZnS) layers were not sharp, but contained thin CdxZn1-xS solid solution layers. Annealing enhanced the mixing of the different layers and after 50 h at 300 degrees C no separate CdS and ZnS X-ray reflections could be detected. About 20 nm thick layers could be detected as separate fields by scanning electron microscopy. (C) 1997 Elsevier Science B.V.