Monolithic piezoresistive CMOS magnetic field sensors

被引：57

作者：

Beroulle, V ^{[1
]}

Bertrand, Y ^{[1
]}

Latorre, L ^{[1
]}

Nouet, P ^{[1
]}

机构：

[1] Lab Informat Robot & Microelect Montpellier, F-34392 Montpellier, France

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2003年 / 103卷 / 1-2期

关键词：

magnetic sensors; MEMS; Lorentz force; CMOS; ferromagnetic actuation;

D O I：

10.1016/S0924-4247(02)00317-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two original electromechanical magnetic sensors have been developed using a fully industrial fabrication process that relies on bulk wet etching of CMOS dies. The first device uses the Lorentz force to actuate a U-shaped cantilever beam, while piezoresistive polysilicon gauges convert the beam bending into an electrical signal. A 2 muT sensor resolution is demonstrated, making this device suitable for earth magnetic field measurement. The second prospective device uses a ferromagnetic material deposited on top of a free standing mechanical frame. Such approach leads to the design of a passive sensor that does not require any electrical power for actuation. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：23 / 32

页数：10

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