Characterization and modeling of a CMOS-compatible MEMS technology

被引：13

作者：

Latorre, L

Nouet, P

Bertrand, Y

Hazard, P

Pressecq, F

机构：

[1] Univ Montpellier 2, LIRMM, CNRS, UMR 5506, F-34392 Montpellier, France

[2] Schneider Elect, Nanterre, France

[3] CNES, Qual Assurance Delegat, Toulouse, France

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1999年 / 74卷 / 1-3期

关键词：

mechanical properties; micro-electromechanical sensors; front-side bulk micromachining (FSBM); modeling; test structures; simulation;

D O I：

10.1016/S0924-4247(98)00345-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present a new methodology for efficient electromechanical characterization of a CMOS-compatible micro-electro mechanical sensors (MEMS) technology. Using an original test structure, the so-called 'U-shape cantilever beam', we are able to determine all mechanical characteristics of force sensors constituted with elementary beams in a given technology. A complete set of electromechanical relations that can be used for the design of Microsystems have been also developed. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：143 / 147

页数：5

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