Patterned Graphene Electrodes from Solution-Processed Graphite Oxide Films for Organic Field-Effect Transistors

被引：310

作者：

Pang, Shuping ^{[1
]}

Tsao, Hoi Nok ^{[1
]}

Feng, Xinliang ^{[1
]}

Muellen, Klaus ^{[1
]}

机构：

[1] Max Planck Inst Polymer Res, D-55128 Mainz, Germany

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 34期

关键词：

CARBON NANOTUBES; LOGIC GATES; POLYMER; TRANSPARENT;

D O I：

10.1002/adma.200803812

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A replacement for gold as the hole-injecting metal in organic electronic devices is presented: patterned graphene electrodes prepared from graphite oxide sheets by oxygen plasma etching. Solution-processed organic FETs with poly (3-hexylthiophene) as the semiconductor and these graphene electrodes are shown to perform as well as or even better than devices with gold contacts.

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收藏

页码：3488 / +

页数：5

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