Mosaicity and electrical and optical properties of group III nitrides

被引：7

作者：

Shmidt, NM ^{[1
]}

Besyul'kin, AN

Dunaevsky, MS

Kolmakov, AG

Sakharov, AV

Usikov, AS

Zavarin, EE

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] AA Baikov Met Inst, Moscow 117911, Russia

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2002年 / 14卷 / 48期

关键词：

Current voltage characteristics - Electroluminescence - Fractals - Photoluminescence - Semiconducting gallium compounds - Semiconducting indium compounds;

D O I：

10.1088/0953-8984/14/48/347

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is demonstrated that the degree of mosaic structure domain coalescence has an influence on both the intensity of the yellow band and the blue-shift of the basic photoluminescence peak. Detectable differences between the electroluminescence spectra and the current-voltage characteristics of InGaN/GaN quantum well light-emitting structures with different degrees of order have been found. The possibility of using the new approach, based on multifractal parametrization, to analyse the mosaic structure properties has been demonstrated.

引用

页码：13025 / 13030

页数：6

共 6 条

[1] Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodes [J].