Optical lithography - a historical perspective

被引：28

作者：

Ronse, Kurt ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

COMPTES RENDUS PHYSIQUE | 2006年 / 7卷 / 08期

关键词：

optical lithography; photoresist; phase shifting mask; optical proximity correction; 157 nm lithography; immersion lithography; EUV lithography;

D O I：

10.1016/j.crhy.2006.10.007

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

Optical lithography (also called photolithography) has been the key enabler for scaling feature sizes of integrated circuits, allowing the exponential growth of the semiconductor industry. Often in the past the end of optical lithography has been predicted but this technology is, and is expected to stay, mainstream for the next several years. This article will describe the breakthroughs which allowed photolithography fulfilling all the requirements of advanced volume manufacturing. Based on few principles of optics, this technology went through significant evolutions in the exposure tool and in the photoresist, in reducing the exposure wavelength and more recently by taking advantage of the light coherence and correcting proximity effects, esp. through advanced mask design and optimized illumination techniques. Finally this article will discuss some recent trends in photolithography. (c) 2006 Published by Elsevier Masson SAS on behalf of Academic des sciences.

引用

页码：844 / 857

页数：14

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