Si-H bonds on the 6H-SiC(0001) surface after H-2 annealing

被引:38
作者
Tsuchida, H
Kamata, I
Izumi, K
机构
[1] Central Research Inst of Electric, Power Industry, Kanagawa, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 6A期
关键词
6H-SiC; surface; termination; Si-H bond; H-2; annealing; FTIR-ATR;
D O I
10.1143/JJAP.36.L699
中图分类号
O59 [应用物理学];
学科分类号
摘要
The Si-H bonds on the 6H-SiC(0001) on-axis surface were investigated using Fourier-transformed infrared attenuated total reflection (FTIR-ATR). The clear absorption bands of the Si-H stretching vibrations were observed from the 6H-SiC(0001) on-axis surface after H-2 annealing. The configuration of the Si-H bonds on the surface was discussed from the polarized spectra, the chemical characteristics and the electronegativities of the atoms bonded to the Si. The FTIR-ATR spectra suggested that the 6H-SiC(0001) on-axis surface after H-2 annealing at 1000 degrees C was primarily terminated by silicon monohydride with high regularity.
引用
收藏
页码:L699 / L702
页数:4
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