Si-H bonds on the 6H-SiC(0001) surface after H-2 annealing

被引：38

作者：

Tsuchida, H

Kamata, I

Izumi, K

机构：

[1] Central Research Inst of Electric, Power Industry, Kanagawa, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 6A期

关键词：

6H-SiC; surface; termination; Si-H bond; H-2; annealing; FTIR-ATR;

D O I：

10.1143/JJAP.36.L699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Si-H bonds on the 6H-SiC(0001) on-axis surface were investigated using Fourier-transformed infrared attenuated total reflection (FTIR-ATR). The clear absorption bands of the Si-H stretching vibrations were observed from the 6H-SiC(0001) on-axis surface after H-2 annealing. The configuration of the Si-H bonds on the surface was discussed from the polarized spectra, the chemical characteristics and the electronegativities of the atoms bonded to the Si. The FTIR-ATR spectra suggested that the 6H-SiC(0001) on-axis surface after H-2 annealing at 1000 degrees C was primarily terminated by silicon monohydride with high regularity.

引用

页码：L699 / L702

页数：4

共 13 条

[11] Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching [J].