Large magnetoresistance in magnetically frustrated ruthenates

被引：15

作者：

Mamchik, A ^{[1
]}

Chen, IW ^{[1
]}

机构：

[1] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 04期

关键词：

D O I：

10.1063/1.1540234

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A large negative magnetoresistance effect is found in Fe-doped ruthenates of perovskite and layered perovskite structures. These new materials are magnetically glassy, and can be derived from a parent compound that is either magnetic or nonmagnetic. The magnetoresistance is nearly linear with the magnetic field up to 9 T and is stronger at lower temperature. Atomic-level spin valves associated with Fe cations on B sites that regulate electron transport in response to an external magnetic field are suggested to be the mechanism responsible. (C) 2003 American Institute of Physics.

引用

页码：613 / 615

页数：3

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