Growth mode transition from layer by layer to step flow during the growth of heteroepitaxial SrRuO3 on (001) SrTiO3

被引:128
作者
Choi, J
Eom, CB
Rijnders, G
Rogalla, H
Blank, DHA
机构
[1] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
[2] Univ Twente, Low Temp Div, NL-7500 AE Enschede, Netherlands
[3] Univ Twente, MESA Res Inst, NL-7500 AE Enschede, Netherlands
关键词
D O I
10.1063/1.1389837
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have observed the growth mode transition from two-dimensional (2D) layer-by-layer to step-flow in the earliest stage growth of heteroepitaxial SrRuO3 thin films on TiO2-terminated (001) SrTiO3 substrates by in situ high pressure reflective high energy electron diffraction (RHEED) and atomic-force microscopy. There is no RHEED intensity recovery after each laser pulse in the first oscillation when the growth mode is 2D layer-by-layer. On the other hand, it is getting more pronounced in the second oscillation, and finally reaches a dynamic steady state in which the growth mode is completely changed into the step-flow mode. The origin of the growth mode transition can be attributed to a change in the mobility of adatoms and switching the surface termination layer from the substrate to the film. SrRuO3 thin films with an atomically smooth surface grown by atomic layer control can be used in oxide multilayered heterostructure devices. (C) 2001 American Institute of Physics.
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页码:1447 / 1449
页数:3
相关论文
共 13 条
[1]   SINGLE-CRYSTAL EPITAXIAL THIN-FILMS OF THE ISOTROPIC METALLIC OXIDES SR1-XCAXRUO3 (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) [J].
EOM, CB ;
CAVA, RJ ;
FLEMING, RM ;
PHILLIPS, JM ;
VANDOVER, RB ;
MARSHALL, JH ;
HSU, JWP ;
KRAJEWSKI, JJ ;
PECK, WF .
SCIENCE, 1992, 258 (5089) :1766-1769
[2]   Control of the growth and domain structure of epitaxial SrRuO3 thin films by vicinal (001) SrTiO3 substrates [J].
Gan, Q ;
Rao, RA ;
Eom, CB .
APPLIED PHYSICS LETTERS, 1997, 70 (15) :1962-1964
[3]  
JULLIERE M, 1975, PHYS LETT, V61, P2472
[4]   Quasi-ideal strontium titanate crystal surfaces through formation of strontium hydroxide [J].
Koster, G ;
Kropman, BL ;
Rijnders, GJHM ;
Blank, DHA ;
Rogalla, H .
APPLIED PHYSICS LETTERS, 1998, 73 (20) :2920-2922
[5]   Imposed layer-by-layer growth by pulsed laser interval deposition [J].
Koster, G ;
Rijnders, GJHM ;
Blank, DHA ;
Rogalla, H .
APPLIED PHYSICS LETTERS, 1999, 74 (24) :3729-3731
[6]   Growth mode mapping of SrTiO3 epitaxy [J].
Lippmaa, M ;
Nakagawa, N ;
Kawasaki, M ;
Ohashi, S ;
Koinuma, H .
APPLIED PHYSICS LETTERS, 2000, 76 (17) :2439-2441
[7]   Step-flow growth of SrTiO3 thin films with a dielectric constant exceeding 104 [J].
Lippmaa, M ;
Nakagawa, N ;
Kawasaki, M ;
Ohashi, S ;
Inaguma, Y ;
Itoh, M ;
Koinuma, H .
APPLIED PHYSICS LETTERS, 1999, 74 (23) :3543-3545
[8]   Reflection high-energy electron diffraction and atomic force microscopy studies on homoepitaxial growth of SrTiO3(001) [J].
Naito, M ;
Yamamoto, H ;
Sato, H .
PHYSICA C, 1998, 305 (3-4) :233-250
[9]   Colossal magnetoresistance magnetic tunnel junctions grown by molecular-beam epitaxy [J].
O'Donnell, J ;
Andrus, AE ;
Oh, S ;
Colla, EV ;
Eckstein, JN .
APPLIED PHYSICS LETTERS, 2000, 76 (14) :1914-1916
[10]   Tunneling magnetoresistance at up to 270 K in La0.8Sr0.2MnO3/SrTiO3/La0.8Sr0.2MnO3 junctions with 1.6-nm-thick barriers [J].
Obata, T ;
Manako, T ;
Shimakawa, Y ;
Kubo, Y .
APPLIED PHYSICS LETTERS, 1999, 74 (02) :290-292