1.54 μm infrared photoluminescence and electroluminescence from an erbium organic compound

被引：123

作者：

Sun, RG

Wang, YZ

Zheng, QB

Zhang, HJ

Epstein, AJ

机构：

[1] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

[2] Acad Sinica, Changchun Inst Appl Chem, Changchun 130022, Jilin, Peoples R China

[3] Ohio State Univ, Dept Chem, Columbus, OH 43210 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 10期

关键词：

D O I：

10.1063/1.373027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Infrared emission at 1.54 mu m excited optically and electrically from an erbium organic compound tris(acetylacetonato)(1,10-phenanthroline) erbium [Er(acac)(3)(phen)] is observed. The rare-earth complex is dispersed into a polymer matrix of poly(N-vinylcarbazole) (PVK) to fabricate an electroluminescent (EL) device with an ITO/PVK:Er(acac)(3)(phen)/Al:Li/Ag structure, where ITO represents indium-tin-oxide-coated glass. The device shows infrared EL emission at 1.54 mu m, which suggests a simple and cheap method to obtain a light source for 1.54-mu m-wavelength devices in optical communications. (C) 2000 American Institute of Physics. [S0021-8979(00)00301-7].

引用

页码：7589 / 7591

页数：3

共 19 条

[11] Electroluminescence of erbium-doped silicon films as grown by ion beam epitaxy
Matsuoka, M
Tohno, S
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (01) : 96 - 98
[12] THE CHARACTERISTIC OF ACEL IN ZNS-ER-3+ THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY METHOD (ALE)
MENG, LJ
ZHONG, GZ
[J]. JOURNAL OF LUMINESCENCE, 1988, 40-1 : 788 - 789
[13] Sinha S.P., 1966, COMPLEXES RARE EARTH
[14] Electroluminescence of erbium-oxygen-doped silicon diodes grown by molecular beam epitaxy
Stimmer, J
Reittinger, A
Nutzel, JF
Abstreiter, G
Holzbrecher, H
Buchal, C
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (23) : 3290 - 3292
[15] SUN RG, 1997, THESIS U TOKYO
[16] ELECTROLUMINESCENCE OF DOPED ORGANIC THIN-FILMS
TANG, CW
VANSLYKE, SA
CHEN, CH
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (09) : 3610 - 3616
[17] ORGANIC ELECTROLUMINESCENT DIODES
TANG, CW
VANSLYKE, SA
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (12) : 913 - 915
[18] Green photoluminescence from Er-containing amorphous SiN thin films
Zanatta, AR
Nunes, LAO
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (24) : 3127 - 3129
[19] ROOM-TEMPERATURE SHARP LINE ELECTROLUMINESCENCE AT LAMBDA=1.54-MU-M FROM AN ERBIUM-DOPED, SILICON LIGHT-EMITTING DIODE
ZHENG, B
MICHEL, J
REN, FYG
KIMERLING, LC
JACOBSON, DC
POATE, JM
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (21) : 2842 - 2844

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