Transient electroluminescence measurements on organic heterolayer light emitting diodes

被引：48

作者：

Mückl, AG ^{[1
]}

Berleb, S ^{[1
]}

Brütting, W ^{[1
]}

Schwoerer, M ^{[1
]}

机构：

[1] Univ Bayreuth, D-95440 Bayreuth, Germany

来源：

SYNTHETIC METALS | 2000年 / 111卷

关键词：

electroluminescence measurements; Alq(3); light emitting diodes;

D O I：

10.1016/S0379-6779(99)00367-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the field dependence of the electron and hole drift mobility in tris-(8-hydroxyquinoline) aluminium (Alq(3)) in organic multi layer light emitting diodes (LEDs) using transient electroluminescence measurements. The electron transport in thin films of Alq(3) can be understood in terms of hopping processes. We obtain a full set of parameters for a modified Poob-Frenkel equation describing the temperature and field dependence of the electron drift mobility. For the measurement of the hole drift mobility, a special device structure was designed. We were able to determine the hole drift mobility in Alq(3) and found good agreement with the data obtained from previous time-of-flight (TOF) measurements. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：91 / 94

页数：4

共 9 条

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