Microstructures and thermoelectric properties of p-type pseudo-binary Bi-Sb-Te alloys with partial substitution of Ga for Sb prepared by spark plasma sintering

被引：16

作者：

Cui, J. L. ^{[1
]}

Xue, H. F.

Xiu, W. J.

机构：

[1] Ningbo Univ Technol, Sch Mech Engn, Ningbo 315016, Peoples R China

[2] China Univ Min & Technol, Sch Mat Sci & Engn, Xuzhou 221008, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2006年 / 135卷 / 01期

关键词：

thermoelectric properties; pseudo-binary Bi-Sb-Te alloys; gallium substitution for antimony; spark plasma sintering; microstructure;

D O I：

10.1016/j.mseb.2006.08.040

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

P-type pseudo-binary Bi-Sb-Te alloys with Ga substitution for Sb in raw mixtures were prepared by spark plasma sintering (SPS) technique, results show that a proper Ga substitution for Sb can improve the thermoelectric performance near room temperature. With molar fraction x increasing from 0 to 0.1 in the GaxBi0.5Sb1.5-xTe3 alloys, a ratio sigma/kappa can be enhanced from 23,178 to 34,807 K V-2 at 318 K, without noticeable loss of Seebeck coefficients. The maximum ZT value of 0.65 (+/- 0.16) is achieved, being approximate 0. 11 higher than that of Bi0.5Sb1.5Te3. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：44 / 49

页数：6

共 15 条

[1]

BHANDARI CM, 1988, THRMAL CONDUCTION SE

[2] Thermoelectric performance of quaternary Cu-Bi-Sb-Te alloys prepared by cold pressing [J].

Cui, J. L. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2006, 415 (1-2) :216-219

[3] Thermoelectric properties of Cu-doped p-type pseudo-binary CuxBi0.5-xTe3 (x=0.05-0.4) alloys prepared by spark plasma sintering [J].

Cui, J. L. ;

Xue, H. F. ;

Xiu, W. J. ;

Yang, W. ;

Xu, X. B. .

SCRIPTA MATERIALIA, 2006, 55 (04) :371-374

[4] Transport properties of quaternary Ag-Bi-Sb-Te alloys prepared by pressureless sintering [J].

Cui, JL ;

Xu, XB .

MATERIALS LETTERS, 2005, 59 (26) :3205-3208

[5]

CUI JL, IN PRESS MAT LETT

[6] High thermoelectric performance at low temperature of p-Bi1.8Sb0.2Te3.0 grown by the gradient freeze method from Te-rich melt [J].

Huong, NT ;

Setou, Y ;

Nakamoto, G ;

Kurisu, M ;

Kajihara, T ;

Mizukami, H ;

Sano, S .

JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 368 (1-2) :44-50

[7]

LI ML, 2003, HDB CHEM DATA CHEM E, P6

[8] Behavior of Ag admixtures in Sb2Te3 and Bi2Te3 single crystals [J].

Navratil, J ;

Klichova, I ;

Karamazov, S ;

Sramkova, J ;

Horak, J .

JOURNAL OF SOLID STATE CHEMISTRY, 1998, 140 (01) :29-37

[9] Sintering, consolidation, reaction and crystal growth by the spark plasma system (SPS) [J].

Omori, M .

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2000, 287 (02) :183-188

[10] Fabrication and thermoelectric properties of p-type Bi0.5Sb1.5Te3 compounds by ingot extrusion [J].

Seo, J ;

Cho, D ;

Park, K ;

Lee, C .

MATERIALS RESEARCH BULLETIN, 2000, 35 (13) :2157-2163

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