Light-hadron induced SER and scaling relations for 16-and 64-Mb DRAMS

被引：14

作者：

Hofman, GJ ^{[1
]}

Peterson, RJ

Gelderloos, CJ

Ristinen, RA

Nelson, ME

Thompson, A

Ziegler, JF

Mullfeld, H

机构：

[1] Univ Colorado, Phys Nucl Lab, Boulder, CO 80309 USA

[2] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2000年 / 47卷 / 02期

关键词：

circuit design; hadrons; memory testing; particle beams; soft error rates;

D O I：

10.1109/23.846273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on soft error rates (SER) of 16 and 64 Mb dynamic memory chips induced by three types of elementary particles, neutrons, protons, and pions, with emphasis on results obtained with pion beams. Significant SER differences, up to a factor 1000, are seen between various manufacturers and cell technologies. We discuss reaction mechanisms and by comparing SER rates to nuclear reaction cross sections present guidelines for predicting failure rates.

引用

页码：403 / 407

页数：5

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