Pion-induced soft upsets in 16 Mbit DRAM chips

被引：8

作者：

Gelderloos, CJ

Peterson, RJ

Nelson, ME

Ziegler, JF

机构：

[1] Univ Colorado, Nucl Phys Lab, Boulder, CO 80309 USA

[2] USN Acad, Annapolis, MD 21402 USA

[3] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1997年 / 44卷 / 06期

关键词：

D O I：

10.1109/23.659041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements of the soft upset cross section due to energetic charged pions were made in various 16 Mbit memory chips, as a function of incident pion energy and for chips with different cell technologies. Significant differences are seen to exist between cell technologies, up to a factor of 1000 in cross section. Upset cross sections are reported that exhibit proportionality: to the reaction cross section for pions on silicon, including the well-known enhancement over proton and neutron cross sections near the delta resonance. Implications of this enhancement for pion-induced upsets due to cosmic ray fluxes are discussed.

引用

页码：2237 / 2242

页数：6

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