Photovoltaic properties in CdS/CdTe thin-film heterosystems with graded-gap interfaces

被引：14

作者：

Boiko, BT

Khripunov, GS

Yurchenko, VB

Ruda, HE

机构：

[1] UNIV TORONTO,TORONTO,ON M5S 1A4,CANADA

[2] KHARKOV STATE POLYTECH UNIV,UA-310002 KHARKOV,UKRAINE

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1997年 / 45卷 / 04期

关键词：

CdS/CdTe thin-film; graded-gap interface; p-n junction;

D O I：

10.1016/S0927-0248(96)00068-2

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Hot-wall vacuum deposited n-CdS/p-CdTe thin-film solar cells with the graded-gap CdTe1-xSx interfaces have been investigated. The CdTe1-xSx interfaces have been studied by means of the measurement and subsequent computer simulation of the spectral photoresponse curves, as well as by the layer-by-layer laser mass-spectrometry analysis of the cells. The p-n junction optimization according to the simulation results has been carried out by means of the open-air annealing of the fresh-prepared solar cells.

引用

页码：303 / 308

页数：6

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