Radiological X-ray response of polycrystalline mercuric iodide detectors

被引：32

作者：

Schieber, M ^{[1
]}

Hermon, H ^{[1
]}

Street, RA ^{[1
]}

Ready, SE ^{[1
]}

Zuck, A ^{[1
]}

Vilensky, A ^{[1
]}

Melekhov, L ^{[1
]}

Shatunovsky, R ^{[1
]}

Meerson, E ^{[1
]}

Saado, Y ^{[1
]}

机构：

[1] Hebrew Univ Jerusalem, IL-91904 Jerusalem, Israel

来源：

MEDICAL IMAGING 2000: PHYSICS OF MEDICAL IMAGING | 2000年 / 3977卷

关键词：

imaging; X-ray digital radiology; polycrystalline; mercuric iodide;

D O I：

10.1117/12.384520

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

A first image of some tiny screws were obtained for the first time with polycrystalline HgI2 acting as the photoconductor material deposited on a-Si direct conversion X-ray image sensors, produced by Xerox- Pale Alto Research Center. The initial results are very promising and show a high X-ray sensitivity and low leakage current. The response of these detectors to a radiological X-ray generator of 65 kVp has been studied using the current integration mode. Already its sensitivity expressed in mu C/R*cm(2), is very high, values of 20 mu C/R*cm(2) have been measured for films of 100-250 microns thickness and bias of 50-200 volts respectively, which is superior to the published data for competing materials such as polycrystalline PbI2 and a-Se detectors. The fabrication and characterization measurements of the Polycrystalline HgI2 thick film detectors will be given. The characterization data which will be reported here consists of: a) sensitivity, b) dark currents, c) stability of sensitivity dependence on the number of exposure, d) X-ray response dependence on dose energy and e) signal decay dependence on the number of exposures.

引用

页码：48 / 55

页数：8

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