Lattice parameter of Si1-x-yGexCy alloys

被引：79

作者：

De Salvador, D

Petrovich, M

Berti, M

Romanato, F

Napolitani, E

Drigo, A

Stangl, J

Zerlauth, S

Mühlberger, M

Schäffler, F

Bauer, G

Kelires, PC

机构：

[1] Univ Padua, INFM, I-35131 Padua, Italy

[2] Univ Padua, Dept Phys, I-35131 Padua, Italy

[3] Johannes Kepler Univ, Inst Halbleiterphys, A-4040 Linz, Austria

[4] Univ Crete, Dept Phys, Heraklion 71003, Crete, Greece

[5] Fdn Res & Technol Hellas, FORTH, Heraklion 71110, Greece

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.61.13005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The introduction of carbon into silicon-germanium-based heterostructures offers increased flexibility in tailoring their strain state and electronic properties. Still, however, fundamental physical properties such as the lattice parameter and the elastic properties of Si1-x-yGexCy random alloys are not precisely known. In this paper, we present a quantitative study of the effect of carbon on the lattice parameter of Si1-x-yGexCy alloys in the technologically relevant range of Ge and C compositions. A strong deviation from Vegard's rule is experimentally and theoretically derived. The influence of the correlation between Ge and C on the lattice parameter is discussed. The results allow us to establish the compensation ratio v of Ge to C concentrations (where the Si1-x-yGexCy epilayer is lattice matched to Si), for which we find a value of v = 12.

引用

页码：13005 / 13013

页数：9