Fabrication of high aspect ratio silicon microstructures by anodic etching

被引：18

作者：

Charlton, MDB

Parker, GJ

机构：

[1] Dept. of Electronics and Comp. Sci., Mountbatten Building, University of Southampton, Southampton

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 1997年 / 7卷 / 03期

关键词：

D O I：

10.1088/0960-1317/7/3/020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a refinement of the anodization process commonly used for the formation of porous silicon, which allows the fabrication of arrays of very high aspect ratio sub-micron pores and free-standing pillars. These structures are shown to possess a wide photonic band gap in the near infra red.

引用

页码：155 / 158

页数：4

共 8 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].