Strong Aharonov-Bohm oscillations in GaAs two-dimensional holes

被引：19

作者：

Habib, B. ^{[1
]}

Tutuc, E. ^{[1
]}

Shayegan, M. ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 15期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2720711

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors measured Aharonov-Bohm resistance oscillations [Phys. Rev. 115, 485 (1959)] in a shallow two-dimensional GaAs hole ring structure, defined by local anodic surface oxidation. The amplitude of the oscillations is about 10% of the ring resistance, the strongest seen in a hole system. In addition the authors observe resistance oscillations as a function of front gate bias at zero magnetic field. They authors discuss the results in light of spin interference in the ring and possible applications to spintronics. (c) 2007 American Institute of Physics.

引用

页数：3

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