Ambipolar all-polymer bulk heterojunction field-effect transistors

被引：74

作者：

Szendrei, Krisztina ^{[2
]}

Jarzab, Dorota ^{[2
]}

Chen, Zhihua ^{[1
]}

Facchetti, Antonio ^{[1
]}

Loi, Maria A. ^{[2
]}

机构：

[1] Polyera Corp, Skokie, IL 60077 USA

[2] Univ Groningen, Zernike Inst Adv Mat, NL-9700 AE Groningen, Netherlands

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2010年 / 20卷 / 07期

关键词：

THIN-FILM-TRANSISTOR; HIGH-MOBILITY; CHARGE-TRANSPORT; ELECTRON; BLENDS; PENTACENE; METAL;

D O I：

10.1039/b919596c

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We demonstrate solution processable all-polymer based field-effect transistors (FETs) exhibiting comparable electron and hole mobilities. The semiconducting layer is a bulk heterojunction of poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (n-type polymer) and regioregular poly(3-hexylthiophene) (p-type polymer). These polymers form a type-II heterojunction as revealed by the faster photoluminescence dynamics of the blend compared to the pristine materials. An electron mobiliy of 4 x 10(-3) cm(2)/V s and a hole mobility of 2 x 10(-3) cm(2)/V s were extracted from the transfer characteristics of bottom contact FETs. The balanced mobilities suggest that the active layer is a fine network of the two components, as confirmed by atomic force microscopy phase images.

引用

页码：1317 / 1321

页数：5

共 37 条

[1] Ambipolar organic field-effect transistors based on a solution-processed methanofullerene [J].

Anthopoulos, TD ;

Tanase, C ;

Setayesh, S ;

Meijer, EJ ;

Hummelen, JC ;

Blom, PWM ;

de Leeuw, DM .

ADVANCED MATERIALS, 2004, 16 (23-24) :2174-+

[2] Air-stable complementary-like circuits based on organic ambipolar transistors [J].

Anthopoulos, Thomas D. ;

Setayesh, Sepas ;

Smits, Edsger ;

Colle, Michael ;

Cantatore, Eugenio ;

de Boer, Bert ;

Blom, Paul W. M. ;

de Leeuw, Dago M. .

ADVANCED MATERIALS, 2006, 18 (14) :1900-+

[3] Ambipolar charge transport in air-stable polymer blend thin-film transistors [J].

Babel, A ;

Wind, JD ;

Jenekhe, SA .

ADVANCED FUNCTIONAL MATERIALS, 2004, 14 (09) :891-898

[4] High electron mobility and ambipolar charge transport in binary blends of donor and acceptor conjugated polymers [J].

Babel, Amit ;

Zhu, Yan ;

Cheng, Kai-Fang ;

Chen, Wen-Chang ;

Jenekhe, Samson A. .

ADVANCED FUNCTIONAL MATERIALS, 2007, 17 (14) :2542-2549

[5] Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility [J].

Bao, Z ;

Dodabalapur, A ;

Lovinger, AJ .

APPLIED PHYSICS LETTERS, 1996, 69 (26) :4108-4110

[6] High Mobility and Luminescent Efficiency in Organic Single-Crystal Light-Emitting Transistors [J].

Bisri, Satria Zulkarnaen ;

Takenobu, Taishi ;

Yomogida, Yohei ;

Shimotani, Hidekazu ;

Yamao, Takeshi ;

Hotta, Shu ;

Iwasa, Yoshihiro .

ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (11) :1728-1735

[7] Ambipolar charge carrier transport in organic semiconductor blends of phthalocyanine and fullerene [J].

Bronner, Markus ;

Opitz, Andreas ;

Bruetting, Wolfgang .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (03) :549-563

[8] Ambipolar organic field-effect transistors fabricated using a composite of semiconducting polymer and soluble fullerene [J].

Cho, Shinuk ;

Yuen, Jonathan ;

Kim, Jin Young ;

Lee, Kwanghee ;

Heeger, Alan J. .

APPLIED PHYSICS LETTERS, 2006, 89 (15)

[9] General observation of n-type field-effect behaviour in organic semiconductors [J].

Chua, LL ;

Zaumseil, J ;

Chang, JF ;

Ou, ECW ;

Ho, PKH ;

Sirringhaus, H ;

Friend, RH .

NATURE, 2005, 434 (7030) :194-199

[10] Tuning of metal work functions with self-assembled monolayers [J].

de Boer, B ;

Hadipour, A ;

Mandoc, MM ;

van Woudenbergh, T ;

Blom, PWM .

ADVANCED MATERIALS, 2005, 17 (05) :621-+

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