Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

被引：305

作者：

Chu, Min ^{[1
]}

Sun, Yongke ^{[1
]}

Aghoram, Umamaheswari ^{[1
]}

Thompson, Scott E. ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32610 USA

来源：

ANNUAL REVIEW OF MATERIALS RESEARCH | 2009年 / 39卷

关键词：

stress; uniaxial; biaxial; band structure; effective mass; scattering; UNIAXIALLY STRESSED SILICON; P-CHANNEL MOSFETS; MONTE-CARLO; CYCLOTRON-RESONANCE; HIGH-PERFORMANCE; ELECTRON-TRANSPORT; SURFACE-ROUGHNESS; GERMANIUM MOSFETS; INVERSION-LAYERS; HOLE MOBILITY;

D O I：

10.1146/annurev-matsci-082908-145312

中图分类号：

T [工业技术];

学科分类号：

120111 [工业工程];

摘要：

Metal-oxide-semicondutor field-effect transistors (MOSFETs) have shown impressive performance improvements over the past 10 years by incorporating strained silicon (Si) technology. This review gives an overview of the impact of strain oil carrier mobility in Si n- and pMOSFETS by considering strain-induced band splitting, band warping and consequent carrier repopulation, and altered conductivity effective mass and scattering rate. Different surface orientations, channel directions, and gate electric fields are included for a fully theoretical understanding. The results are used to predict strain-enhanced silicon-on-insulator (SOI) and multigate device performance, mainly focusing on potential 22-nm and beyond device options such is double-gate and trigate fin field-effect transistor (FinFET) structures. Insights into strain-enhanced potential future channel materials (SiGe, Ge, and GaAs) are also summarized. Finally, recent technology nodes with strain engineering are reviewed, and the future developing trend is given.

引用

页码：203 / 229

页数：27

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