A comparison of nucleation and growth investigations of thin films using scanning tunneling microscopy, atomic force microscopy and X-ray scattering

被引：7

作者：

Dharmadhikari, CV ^{[1
]}

Ali, AO

Suresh, N

Phase, DM

Chaudhari, SM

Gupta, A

Dasannacharya, BA

机构：

[1] Univ Poona, Dept Phys, Ctr Adv Studies Mat Sci & Solid State Phys, Poona 411007, Maharashtra, India

[2] Inter Univ Consortium DAE Facil, Indore 452017, India

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 75卷 / 01期

关键词：

growth; scanning tunneling microscopy; atomic force microscopy; X-ray diffraction;

D O I：

10.1016/S0921-5107(00)00385-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Roughness and general morphology of silver films grown on Si(111) substrates have been investigated using scanning tunneling microscopy (STM) and atomic force microscopy (AFM) and X-ray scattering. The results are quantitatively analyzed in terms of height histograms, height-height correlations in the light of dynamical scaling approach. The scaling exponents obtained by the three techniques used here are in agreement with each other. Some quantitative differences in rms roughness can be explained by considering wavelength spectrum of roughness probed by these techniques. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：29 / 37

页数：9

共 25 条

[1] Surface characterization of oriented silver films on Si (100) substrates using scanning tunnelling microscopy [J].