I-Line lithography of poly-(3,4-ethylenedioxythiophene) electrodes and application in all-polymer integrated circuits

被引：56

作者：

Touwslager, FJ ^{[1
]}

Willard, NP ^{[1
]}

de Leeuw, DM ^{[1
]}

机构：

[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 24期

关键词：

D O I：

10.1063/1.1524031

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Industrialization of polymer electronics requires the use of safe solvents. To that end an I-line lithography process for conducting thin poly(3,4-ethylenedioxythiophene) films has been developed. The fully waterborne process is based on photocrosslinking using bisazide- and polyazide-type photoinitiators. The minimum feature size realized comprises 2.5 mum wide lines separated by 1 mum spacings. The sheet resistance is 1 kOmega/square. The process has been applied to fabricate all-polymer integrated circuits. The technology is demonstrated with functional 15-bit code generators. (C) 2002 American Institute of Physics.

引用

页码：4556 / 4558

页数：3

共 20 条

[1] High-performance plastic transistors fabricated by printing techniques [J].