Fourier-transform infrared reflection study of the morphology of porous semiconductor structures

被引：7

作者：

Belogorokhov, A

Pusep, YA

Belogorokhova, L

机构：

[1] Inst Rare Met, Moscow 117571, Russia

[2] Univ Fed Sao Carlos, BR-13565905 Sao Carlos, SP, Brazil

[3] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 117899, Russia

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2000年 / 12卷 / 16期

关键词：

D O I：

10.1088/0953-8984/12/16/311

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Porous semiconductor films (GaAs and GaP) were studied by Fourier-transform infrared reflection spectroscopy, which was shown to enable one to determine their morphologies and such essential parameters for the porous structures as the filling factor.

引用

页码：3897 / 3900

页数：4

共 8 条

[1]

ASSAM RMA, 1977, ELLIPSOMETRY POLARIZ

[2]

BELOGOROKHOV AI, 1994, JETP LETT+, V60, P274

[3] INFRARED ABSORPTION AT LONGITUDINAL OPTIC FREQUENCY IN CUBIC CRYSTAL FILMS [J].