Fe/ZnSe(001) Schottky-barrier height evaluated by photoemission

被引：25

作者：

Eddrief, M

Marangolo, M

Corlevi, S

Guichar, GM

Etgens, VH

Mattana, R

Mosca, DH

Sirotti, F

机构：

[1] Univ Paris 06, Lab Mineral & Crsitallog Paris, CNRS, IPGP, F-75252 Paris, France

[2] Univ Paris 07, Lab Mineral & Crsitallog Paris, CNRS, IPGP, F-75252 Paris, France

[3] CNRS THALES, Unite Mixte Phys, F-91404 Orsay, France

[4] Ctr Politecn, Dept Fis, UFPR, BR-81531990 Curitiba, Parana, Brazil

[5] Univ Paris 11, Lab Utilisat Rayonnement Electromagnet, CNRS, F-91405 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 24期

关键词：

D O I：

10.1063/1.1526170

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the Schottky-barrier height determination for the Fe/ZnSe(001) system performed by core and valence level photoelectron emission spectroscopy. Above the thickness of 2 ML, the Fe-Fermi level position is stabilized at 1.6 eV above the valence-band maximum of the n-type undoped ZnSe. This corresponds to a Schottky-barrier height value of 1.1 eV. A bulk-like d-band electronic structure could be observed for thickness as thin as 2 ML of Fe. (C) 2002 American Institute of Physics.

引用

页码：4553 / 4555

页数：3

共 29 条

[1] SURFACE PHOTOVOLTAGE EFFECTS IN PHOTOEMISSION FROM METAL-GAP(110) INTERFACES - IMPORTANCE FOR BAND-BENDING EVALUATION [J].