Ultrafast (370 GHz bandwidth) p-i-n traveling wave photodetector using low-temperature-grown GaAs

被引：22

作者：

Chiu, YJ

Fleischer, SB

Lasaosa, D

Bowers, JE

机构：

[1] Dept. of Elec. and Comp. Engineering, Univ. of California at Santa Barbara, Santa Barbara

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 17期

关键词：

D O I：

10.1063/1.120115

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors demonstrate p-i-n traveling wave photodetectors utilizing low-temperature-grown GaAs as the absorption layer. The electro-optically measured impulse response was found to exhibit a pulsewidth of 1.1 ps full width at half maximum, corresponding to a -3 dB bandwidth of 370 GHz with an external quantum efficiency of 8% at 800 nm. (C) 1997 American Institute of Physics. [S0003-6951(97)00243-X].

引用

收藏

页码：2508 / 2510

页数：3

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