Line broadening and localization mechanisms in CdSe/ZnSe quantum dots

被引：17

作者：

Türck, V ^{[1
]}

Rodt, S ^{[1
]}

Stier, O ^{[1
]}

Heitz, R ^{[1
]}

Pohl, UW ^{[1
]}

Engelhardt, R ^{[1
]}

Bimberg, D ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

JOURNAL OF LUMINESCENCE | 2000年 / 87-9卷

关键词：

quantum dots; single-dot spectroscopy; cathodoluminescence;

D O I：

10.1016/S0022-2313(99)00363-4

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We analyze the line-broadening mechanisms of single CdSe quantum dot (QD) emission lines. A jitter in the emission energy of individual CdSe QDs is reported for the first time. The jitter is caused by the quantum-confined Stark effect induced by the randomly fluctuating charges of defects in the vicinity of the QDs. These random processes lead to a broadening of the emission lines and usually inhibit the determination of a true homogeneous line width. On the other hand, identical jitter allows the unambiguous assignment of groups of emission lines to single QDs. A strong thermal broadening of the QD emission lines is observed. From our observations, parameters of the phase relaxation due to acoustic and LO phonon scattering, which is the main line broadening mechanism, are derived. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：337 / 340

页数：4

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