Recombination lifetime of charge carriers in DLC thin films

被引：5

作者：

Bak, GW ^{[1
]}

Dluzniewski, M ^{[1
]}

Staryga, E ^{[1
]}

Kania, S ^{[1
]}

Walocha, J ^{[1
]}

机构：

[1] Lodz Tech Univ, Inst Phys, PL-93005 Lodz, Poland

来源：

关键词：

diamond-like carbon; carrier lifetime; transient currents; diffusion capacitance;

D O I：

10.1016/S0925-9635(00)00252-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Decay of photocurrent in diamond-like carbon (DLC) thin films and broadband dielectric measurements of rectifying n-Si/DLC junctions were used to find the recombination lifetime of charge carriers in DLC films. The recombination lifetime found from the two methods was between 10(-4) and 10(-3) s. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：1357 / 1361

页数：5

共 20 条

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