AMORPHOUS DIAMOND-SI SEMICONDUCTOR HETEROJUNCTIONS

被引：80

作者：

AMARATUNGA, GAJ ^{[1
]}

SEGAL, DE ^{[1
]}

MCKENZIE, DR ^{[1
]}

机构：

[1] UNIV SYDNEY,DEPT APPL PHYS,SYDNEY,NSW 2006,AUSTRALIA

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 01期

关键词：

D O I：

10.1063/1.105525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tetrahedrally co-ordinated amorphous carbon (amorphous diamond) deposited from the plasma stream of a vacuum arc on a graphite cathode is demonstrated as having semiconductor properties. The material is shown to form a heterojunction with both p- and n-type Si. A band gap of 2.9 eV is proposed for the a-diamond, based on the observed I-V characteristics of the heterojunction diodes. The material has a measured electrical breakdown strength of 10(9) V/m, which is comparable to that of high quality insulators such as SiO2 and Si3N4. Gas phase doping using B2H6, PH3, and N2 has been attempted.

引用

页码：69 / 71

页数：3

共 12 条

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