Pressure-dependent photoluminescence study of InxGa1-xN

被引：16

作者：

Shan, W

Song, JJ

Feng, ZC

Schurman, M

Stall, RA

机构：

[1] OKLAHOMA STATE UNIV, DEPT PHYS, STILLWATER, OK 74078 USA

[2] EMCORE CORP, SOMERSET, NJ 08873 USA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 17期

关键词：

D O I：

10.1063/1.120083

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the results of pressure-dependent photoluminescence (PL) studies of single-crystal InxGa1-xN (0 less than or equal to x<0.15) films grown on top of thick GaN epitaxial layers by metalorganic chemical vapor deposition with sapphire as substrates. PL measurements were performed at 10 K as a function of applied hydrostatic pressure using the diamond-anvil-cell technique. The luminescence emissions from the InxGa1-xN epifilms were found to shift linearly toward higher energy with increasing pressure. By examining the pressure dependence of the PL spectra, the pressure coefficients for the emission structures associated with the direct band gap of InxGa1-xN were determined. The values of the pressure coefficients were found to be 3.9X10(-3) eV/kbar for In0.08Ga0.92N and 3.5X10(-3) eV/kbar for In0.14Ga0.86N. (C) 1997 American Institute of Physics. [S0003-6951(97)03143-4].

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页码：2433 / 2435

页数：3

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