DC SPICE model for nanocrystalline and microcrystalline silicon TFTs

被引：14

作者：

Dosev, D ^{[1
]}

Ytterdal, T

Pallares, J

Marsal, LF

Iñíguez, B

机构：

[1] Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, Tarragona 43007, Spain

[2] Norwegian Univ Sci & Technol, Dept Phys, N-7034 Trondheim, Norway

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 11期

关键词：

microcrystalline; modeling; nanocrystalline; thin film transistors;

D O I：

10.1109/TED.2002.804719

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a physically-based analytical model for n-channel nanocrystalline and microcrystalline thin-film transistors suitable for implementation in circuit simulators such as SPICE. The model is based on existing models for amorphous silicon thin film transistors, which have been extended to account for observed physical phenomena in nanocrystalline and microcrystalline thin film transistors. The proposed model has been verified for the most important regions of operation of the devices and has shown good agreement with experimental data.

引用

页码：1979 / 1984

页数：6

共 23 条

[1] Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique [J].

Cabarrocas, PRI ;

Brenot, R ;

Bulkin, P ;

Vanderhaghen, R ;

Drévillon, B ;

French, I .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (12) :7079-7082

[2]

DEMARAY E, 1999, P SID SAN JOS CA

[3]

DOSEV D, 2002, THESIS U POLITEC CAT

[4] Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition [J].

Dosev, DK ;

Puigdollers, J ;

Orpella, A ;

Voz, C ;

Fonrodona, M ;

Soler, D ;

Marsal, LF ;

Pallarès, J ;

Bertomeu, J ;

Andreu, J ;

Alcubilla, R .

THIN SOLID FILMS, 2001, 383 (1-2) :307-309

[5] Deposition of amorphous silicon films by hot-wire chemical vapor deposition [J].

Feenstra, KF ;

Schropp, REI ;

Van der Weg, WF .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (09) :6843-6852

[6]

FROGGATT MWD, 1997, P AM MICR SIL TECHN

[7]

HE SS, 1994, P FLAT PAN DISPL MAT

[8] Threshold voltage, field effect mobility, and gate-to-channel capacitance in polysilicon TFT's [J].

Jacunski, MD ;

Shur, MS ;

Hack, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) :1433-1440

[9]

LEE K, 1993, SEMICONDUCTORS DEVIC

[10] Thin film transistors obtained by hot wire CVD [J].

Puigdollers, J ;

Orpella, A ;

Dosev, D ;

Voz, C ;

Peiró, D ;

Pallarés, J ;

Marsal, LF ;

Bertomeu, J ;

Andreu, J ;

Alcubilla, R .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 :1304-1309

← 1 2 3 →