Towards homogeneous and reproducible highly oriented diamond films

被引：11

作者：

Saada, S ^{[1
]}

Barrat, S ^{[1
]}

Bauer-Grosse, E ^{[1
]}

机构：

[1] Ecole Mines, UMR 7570, Lab Sci & Genie Surfaces, F-54042 Nancy, France

来源：

关键词：

heteroepitaxy; growth; characterization; CVD;

D O I：

10.1016/S0925-9635(99)00334-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond films have been deposited by the microwave plasma assisted chemical vapor deposition technique using an ultra short bias enhanced nucleation step to synthesize highly oriented diamond films on single silicon substrate. Firstly in this paper, we focus on the bias enhanced nucleation process to obtain homogeneous and reproducible diamond deposits. By optimizing the process, we obtained a crystal density value of 10(9) cm(-2) on the whole substrate surface for a reduced polarization time of 60 s. Then, using scanning electron microscopy and image analysis, we report cartographies of crystal densities, covering rate and average radius on the whole sample surface. Next, we analyze a local area of the surface to produce a size distribution of the particles versus their type. Lastly, we present a discussion on the ratio of epitaxial crystals. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：300 / 304

页数：5

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