Fabrications of Pb(Sc1/2Nb1/2)O3/xPbTiO3 thin films and their structural characterizations

Highly oriented Pb(Scl/2Nb1/2)O-3 (PSN) and Pb(Sc1/2Nb1/2)O-3/43%PbTiO3 (PSN/43%PT) thin films were fabricated on MgO and SrTiO3 (001) substrates by pulsed laser deposition (PLD) technique. La1/2Sr1/2/CoO3 was deposited on the substrate as a bottom electrode layer for dielectric measurements. The orientation of the films was checked by X-ray diffraction method, and is found to be well oriented along the c-axis for PSN and PSN/PT. Film thickness was determined by the Laue oscillation of X-ray diffraction profile. This enables us to determine the number of pulses for stacking one layer of PSN and PSN/PT thin films. The temperature dependences of lattice constants of PSN and PSN/PT thin films were determined. They exhibit small but clear changes at almost the same temperature as that of the ferroelectric transition points of PSN and PSN/PT ceramics. The surface roughness of these films was observed using atomic force and scanning electron microscopes. Temperature change of dielectric constant epsilon and D-E hysteresis loop were determined for PSN and the real part of epsilon shows 850.