Preparation and electrical properties of sol-gel derived (1-x)Pb(Sc1/2Nb1/2)O3-xPbTiO3 (x=0.6) thin films

被引：10

作者：

Kuh, BJ ^{[1
]}

Choo, WK ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Yusong Gu, Taejon 305701, South Korea

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2001年 / 21卷 / 10-11期

关键词：

ferroelectric properties; (1-x)Pb(Sc1/2Nb1/2)O-3-xPbTiO(3); sol-gel processes;

D O I：

10.1016/S0955-2219(01)00052-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The films of (1-x)Pb(Sc1/2Nb1/2)O-3-xPbTiO(3) (x=0.6, PSNT(40/60)) were successfully deposited on Pt/Ti/SiO2/Si substrates via spin coating method. Using combination of homogeneous precursor solutions and two-step heat treatment, it was possible to obtain the PSNT(40/60) thin films of perfect perovskite phase with virtually no pyrochlore phase after annealing just above 550 degreesC. The root-mean-square surface roughness of a 240-nm-thick film was 3 nm as measured by atomic force microscope (AFM). The PSNT(40/60) films annealed at 650 degreesC showed a well-saturated hysteresis loop at an applied voltage of 7 V with remnant polarization (P-r) and coercieve voltage (V-c) of 14 muC/cm(2) and 1.5 V. The leakage current density was lower than 10(-6) A/cm(2) at an applied voltage of 7 V. (C) 2001 Elsevier Science Ltd.

引用

页码：1509 / 1512

页数：4

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