Photoluminescence and Photoconductivity of ZnS-Coated ZnO Nanowires

被引:133
作者
Bera, Ashok [1 ]
Basak, Durga [1 ]
机构
[1] Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, India
关键词
surface modification; nanowires; optoelectronic properties; ultraviolet; ZnO-ZnS; ARRAYS;
D O I
10.1021/am900686c
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
ZnO nanowires (NWs) with a ZnS coating are synthesized in order to modify the surface without changing the diameter of the NWs. They have the wurtzite ZnO at the core and a cubic ZnS at the outer layer. The NWs show a sharp ultraviolet and a broad visible emission of the photoluminescence spectra. Surface modification has led to a change in the position of the maxima of the visible emission in ZnO-ZnS NWs. The photocarrier relaxation under steady UV illumination occurs in ZnO NW arrays but is absent in ZnO-ZnS NW arrays. The dark current value for both type of NWs are similar, whereas the photocurrent value is much higher in the surface-modified NWs. Higher photocurrent value indicates a transport of the photogenerated carriers from the ZnS layer to ZnO during UV illumination. The carrier transport mechanism is proposed through a model.
引用
收藏
页码:408 / 412
页数:5
相关论文
共 29 条
[1]   Vertically aligned sulfur-doped ZnO nanowires synthesized via chemical vapor deposition [J].
Bae, SY ;
Seo, HW ;
Park, JH .
JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (17) :5206-5210
[2]   Correlation between the microstructure and the origin of the green luminescence in ZnO: A case study on the thin films and nanowires [J].
Bera, A. ;
Basak, D. .
CHEMICAL PHYSICS LETTERS, 2009, 476 (4-6) :262-266
[3]   Carrier relaxation through two-electron process during photoconduction in highly UV sensitive quasi-one-dimensional ZnO nanowires [J].
Bera, A. ;
Basak, D. .
APPLIED PHYSICS LETTERS, 2008, 93 (05)
[4]   Effect of Surface Capping with Poly(vinyl alcohol) on the Photocarrier Relaxation of ZnO Nanowires [J].
Bera, Ashok ;
Basak, Durga .
ACS APPLIED MATERIALS & INTERFACES, 2009, 1 (09) :2066-2070
[5]  
BERA V, 2009, APPL PHYS LETT, V94
[6]   Tailoring the photoluminescence of ZnO nanowires using Au nanoparticles [J].
Chen, T. ;
Xing, G. Z. ;
Zhang, Z. ;
Chen, H. Y. ;
Wu, T. .
NANOTECHNOLOGY, 2008, 19 (43)
[7]   Transparent ZnO thin film transistor fabricated by sol-gel and chemical bath deposition combination method [J].
Cheng, Hua-Chi ;
Chen, Chia-Fu ;
Tsay, Chien-Yie .
APPLIED PHYSICS LETTERS, 2007, 90 (01)
[8]   Structure analysis of nanowires and nanobelts by transmission electron microscopy [J].
Ding, Y ;
Wang, ZL .
JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (33) :12280-12291
[9]   Contact-controlled sensing properties of flowerlike ZnO nanostructures [J].
Feng, P ;
Wan, Q ;
Wang, TH .
APPLIED PHYSICS LETTERS, 2005, 87 (21) :1-3
[10]   Low-temperature wafer-scale production of ZnO nanowire arrays [J].
Greene, LE ;
Law, M ;
Goldberger, J ;
Kim, F ;
Johnson, JC ;
Zhang, YF ;
Saykally, RJ ;
Yang, PD .
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2003, 42 (26) :3031-3034